Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes

Optics Express

Volumn 20, Issue 105, 2012, Pages A765-A776

  Zhao, Peng ^a   Ozhao, Hongping ^a  

^a Case Western Reserve University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOMES; EFFICIENCY; EXTRACTION; FINITE DIFFERENCE TIME DOMAIN METHOD; FLIP CHIP DEVICES; GALLIUM NITRIDE; OPTIMIZATION; THREE DIMENSIONAL;

3D FDTD; FEATURE SIZES; FINITE DIFFERENCE TIME DOMAINS; FLAT SURFACES; FLIP CHIP; INGAN QUANTUM WELLS; LAYER THICKNESS; LED LIGHTS; LIGHT-EXTRACTION EFFICIENCY;

LIGHT EMITTING DIODES;

EID: 84866240755     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.00A765     Document Type: Article

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