Enhanced light extraction in gainn light-emitting diode with pyramid reflector

IEEE Photonics Technology Letters

Volumn 18, Issue 22, 2006, Pages 2347-2349

  Xi, J Q ^a   Luo, Hong ^a   Pasquale, Alyssa J ^b   Kim, Jong Kyu ^b   Schubert, E Fred ^b  

^a Research Rensselaer Polytechnic Institute   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

GaN; Light extraction; Light emitting diode (LED); Reflector

Indexed keywords

EXTRACTION EFFICIENCIES; LIGHT EXTRACTION; LIGHT OUTPUT; RAY TRACING SIMULATION;

DIODES; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; REFLECTION; SILICON COMPOUNDS; SILVER; THREE DIMENSIONAL;

LIGHT EMITTING DIODES;

EID: 34248675248     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.885210     Document Type: Article

References (9)

1. M. R. Krames, M. O. Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, "High-power truncated-invertedpyramid (Al Ga ) In P/GaP light-emitting diodes exhibiting >50%external quantum efficiency," Appl. Phys. Lett., vol.75, p. 2365, 1999.
2. J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O. Shea, M. J. Ludowise, G. Christenson, Y.-C. Shen, C. Lowery, P. S.Martin, S. Subramanya, W.Götz, N. F. Gardner, R. S.Kern, and S. A. Stockman, "Highpower AlGaInN flip-chip light-emitting diodes," Appl. Phys. Lett., vol.78, p. 3379, 2001. (Pubitemid 32519109)
3. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening," Appl. Phys. Lett., vol.84, p. 855, 2004.
4. M. Boroditsky, T. F. Krauss, R. Coccioli, R. Vrijen, R. Bhat, and E. Yablonovitch, "Light extraction from optically pumped light-emitting diode by thin-slab photonic crystals," Appl. Phys. Lett., vol.75, p. 1036, 1999.
5. T. Kato, H. Susawa, M. Hirotani, T. Saka, Y. Ohashi, E. Shichi, and S. Shibata, "GaAs/GaAlAs surface emitting IR LED with Bragg reflector grown by MOCVD," J. Cryst. Growth, vol.107, p. 832, 1991.
6. Y. Kondoh, S. Watanabe, Y. Kaneko, S. Nakagawa, and N. Yamada, "Nitride semiconductor light emitting device having a silver p-contact," U.S. Patent 6 194 743, 2001.
7. J. K. Kim, Th. Gessmann, E. F. Schubert, J.-Q. Xi, H. Luo, J. Cho, C. Sone, and Y. Park, "GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer," Appl. Phys. Lett., vol.88, p. 013501, 2006.
8. J.-Q. Xi, M. Ojha, W. Cho, J. L. Plawsky, W. N. Gill, Th. Gessmann, and E. F. Schubert, "Omnidirectional reflector using nanoporous SiO2 as a low-refractive-index material," Opt. Lett., vol.30, p. 1518, 2005.
9. G. H. B. Thompson, Physics of Semiconductor Laser Devices. New York: Wiley, 1980, ch. 6, p. 309.