Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry

Applied Physics Letters

Volumn 91, Issue 2, 2007, Pages

  Kim, Hyunsoo ^a   Kim, Kyoung Kook ^a   Choi, Kwang Ki ^a   Kim, Hyungkun ^a   Song, June O ^a   Cho, Jaehee ^a   Baik, Kwang Hyeon ^a   Sone, Cheolsoo ^a   Park, Yongjo ^a   Seong, Tae Yeon ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POWER UTILIZATION; ELECTRODES; GALLIUM NITRIDE; GEOMETRY; PRODUCT DESIGN;

CURRENT BLOCKING LAYERS; POWER EFFICIENCY; VERTICAL INJECTION GEOMETRY;

LIGHT EMITTING DIODES;

EID: 34547174675     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2756139     Document Type: Article

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