GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses

Applied Physics Letters

Volumn 84, Issue 13, 2004, Pages 2253-2255

  Choi, H W ^a   Liu, C ^a   Gu, E ^a   McConnell, G ^a   Girkin, J M ^a   Watson, I M ^a   Dawson, M D ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; INDUCTIVELY COUPLED PLASMA; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT REFLECTION; MICROLENSES; MONOLITHIC INTEGRATED CIRCUITS; PLASMA ETCHING; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS;

CONFOCAL MICROSCOPES; MICRO-LIGHT-EMITTING DIODES (MICRO-LED); OPTICAL PATHWAYS; RESIST THERMAL REFLOW;

GALLIUM NITRIDE;

EID: 2142753095     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1690876     Document Type: Article

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