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Applied Physics A: Materials Science and Processing

Volumn 104, Issue 1, 2011, Pages 319-323

Effects of strain-compensated AlGaN/InGaN superlattice barriers on the optical properties of InGaN light-emitting diodes

(3) Tsai, Chia Lung a Fan, Gong Cheng a Lee, Yu Sheng a

a CHANG GUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; BARRIER LAYERS; C-PLANE SAPPHIRE; CRYSTALLINE PERFECTION; CRYSTALLINE QUALITY; EPITAXIAL STRUCTURE; EXCITON LOCALIZATION; HIGH-RESOLUTION X-RAY DIFFRACTION; INTERFACE QUALITY; LIGHT OUTPUT POWER; LONG WAVELENGTH; PHOTOLUMINESCENCE MEASUREMENTS; POLARIZATION FIELD; QUANTUM CONFINED STARK EFFECT; RADIATIVE EFFICIENCY; STRAIN-COMPENSATED; STRAIN-COMPENSATED BARRIER; SUPERLATTICE LAYERS;

CRYSTALLINE MATERIALS; GALLIUM; GALLIUM COMPOUNDS; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; QUALITY CONTROL; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; SPECTROSCOPY; SUPERLATTICES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

LIGHT EMITTING DIODES;

EID: 79959216371 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-010-6140-z Document Type: Article

Times cited : (23)

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