Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes

Applied Physics Letters

Volumn 82, Issue 14, 2003, Pages 2221-2223

  Shen, Y C ^a   Wierer, J J ^a   Krames, M R ^a   Ludowise, M J ^a   Misra, M S ^a   Ahmed, F ^a   Kim, A Y ^a   Mueller, G O ^a   Bhat, J C ^a   Stockman, S A ^a   Martin, P S ^a  

^a Philips Lumileds Lighting Company   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HETEROJUNCTIONS; LIGHT INTERFERENCE; LIGHT REFLECTION; QUANTUM EFFICIENCY; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION ANALYSIS;

OPTICAL CAVITIES;

LIGHT EMITTING DIODES;

EID: 0037425074     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1566098     Document Type: Article

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