Optical properties of type-II InGaN/GaAsN/GaN quantum wells

Optical and Quantum Electronics

Volumn 41, Issue 11-13, 2009, Pages 779-785

  Park, Seoung Hwan ^a   Lee, Yong Tak ^b   Park, Jongwoon ^c  

^a Catholic University of Daegu   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c Korea Institute of Industrial Technology   (South Korea)

Author keywords

GaAsN; GaN; InGaN; Light emitting diode; Quantum wells; Type II

Indexed keywords

GAASN; GAN; INGAN; QUANTUM WELL; TYPE-II;

CARRIER CONCENTRATION; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; OPTICAL PROPERTIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79959502337     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-010-9391-1     Document Type: Article

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