High-brightness InGaN-GaN power flip-chip LEDs

Journal of Lightwave Technology

Volumn 27, Issue 12, 2009, Pages 1985-1989

  Chang, Shoou Jinn ^a   Chen, W S ^a   Shei, S C ^b   Kuo, C T ^c   Ko, Tsun Kai ^c   Shen, C F ^c   Tsai, Jimmy M ^a   Lai, Wei Chi ^a   Sheu, Jinn Kong ^a   Lin, A J ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^c EPISTAR CORPORATION   (Taiwan)

Author keywords

Flip chip; Gallium nitride; Grinding; InGaN GaN light emitting diodes (LEDs); Light emitting diodes; Rough sapphire surface; Rough surfaces; Substrates; Surface morphology; Surface roughness; Surface treatment

Indexed keywords

FLIP-CHIP; GRINDING; INGAN-GAN LIGHT EMITTING DIODES (LEDS); ROUGH SAPPHIRE SURFACE; ROUGH SURFACES;

CORUNDUM; DIODES; FLIP CHIP DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; GRINDING (COMMINUTION); GRINDING (MACHINING); LIGHT EMISSION; LIGHT EMITTING DIODES; MORPHOLOGY; SAPPHIRE; SEMICONDUCTING GALLIUM; SUBSTRATES; SURFACE MEASUREMENT; SURFACE PROPERTIES; SURFACE ROUGHNESS; SURFACE TREATMENT;

SURFACE MORPHOLOGY;

EID: 67649858443     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2008.2005849     Document Type: Article

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