Low-frequency noise in ambipolar carbon nanotube transistors

Nano Letters

Volumn 8, Issue 4, 2008, Pages 1090-1094

  Back, Ju H ^a   Kim, Sunkook ^b   Mohammadi, Saeed ^b   Shim, Moonsub ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; AMBIPOLAR; AMBIPOLAR CHARACTERISTICS; BACK GATES; CARBON NANOTUBE TRANSISTORS; CHEMICAL ENVIRONMENTS; ENERGY DISTRIBUTIONS; LOW-FREQUENCY NOISE; LOW-FREQUENCY NOISE MEASUREMENTS; N CHANNELS; NANOTUBE TRANSISTORS; NOISE AMPLITUDES; NON-UNIFORM; POLYMER ELECTROLYTES; SINGLE-WALLED CARBONS;

FIELD EFFECT TRANSISTORS; POLYELECTROLYTES; SINGLE-WALLED CARBON NANOTUBES (SWCN); THERMAL NOISE;

CARBON NANOTUBES;

EID: 56849094642     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl073140g     Document Type: Article

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