High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: Effects of metal contacts and ozone treatment

Nanotechnology

Volumn 18, Issue 15, 2007, Pages

  Ju, Sanghyun ^a   Lee, Kangho ^a   Yoon, Myung Han ^b   Facchetti, Antonio ^b   Marks, Tobin J ^b   Janes, David B ^a  

^a PURDUE UNIVERSITY   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DRAIN CURRENT; GATE DIELECTRICS; INTERFACES (MATERIALS); NANOWIRES; OZONE; ZINC OXIDE;

NANODIELECTRICS; OZONE TREATMENT; SELF ASSEMBLED ORGANIC GATE INSULATORS;

GATES (TRANSISTOR);

ALUMINUM; GOLD; METAL; NANOWIRE; SILICON DIOXIDE; TITANIUM; ZINC OXIDE;

ARTICLE; DEVICE; DIELECTRIC CONSTANT; ELECTRONICS; NANOTECHNOLOGY; OZONE THERAPY; PRIORITY JOURNAL; SEMICONDUCTOR; SIMULATION;

EID: 33947405274     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/15/155201     Document Type: Article

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