Passivation effects on ZnO nanowire field effect transistors under oxygen, ambient, and vacuum environments

Applied Physics Letters

Volumn 92, Issue 26, 2008, Pages

  Song, Sunghoon ^a   Hong, Woong Ki ^a   Kwon, Soon Shin ^a   Lee, Takhee ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTRIC WIRE; MESFET DEVICES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; OXYGEN; PASSIVATION; PHOTOACOUSTIC EFFECT; SEMICONDUCTING ZINC COMPOUNDS; TRANSISTORS; VACUUM; ZINC ALLOYS; ZINC OXIDE;

AMBIENT AIR (AA); AMERICAN INSTITUTE OF PHYSICS (AIP); ELECTRICAL (ELECTRONIC) PROPERTIES; ELECTRICAL CHARACTERISTICS; ELECTRONIC DEVICES; METHACRYLATE (APMA); NANOWIRE FET; NANOWIRE SURFACES; OXYGEN MOLECULES; PASSIVATION EFFECTS; POSITIVE GATE BIAS; SURFACE PASSIVATION; ZNO NANOWIRE;

FIELD EFFECT TRANSISTORS;

EID: 46649113145     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2955512     Document Type: Article

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