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Organic Electronics

Volumn 12, Issue 8, 2011, Pages 1414-1421

Highly reliable Si3N4-HfO2 stacked heterostructure to fully flexible poly-(3-hexylthiophene) thin-film transistor

(5) Meena, Jagan Singh a Chu, Min Ching a Wu, Chung Shu a Chang, Feng Chih a Ko, Fu Hsiang a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

Fully flexible electronics; P3HT; Passivation layer; Sol gel process

Indexed keywords

CARRIER MOBILITY; COATINGS; COST EFFECTIVENESS; DRAIN CURRENT; ELECTRIC FIELDS; FLEXIBLE ELECTRONICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; METAL INSULATOR BOUNDARIES; MIM DEVICES; PASSIVATION; SILICON NITRIDE; SOL-GEL PROCESS; SUBSTRATES; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE;

CURRENT ELECTRIC FIELD CHARACTERISTICS; ELECTRICAL PERFORMANCE; ELECTRICAL RELIABILITY; ENVIRONMENTAL STABILITY; METAL INSULATOR METALS; P3HT; PASSIVATION LAYER; POLY (3-HEXYLTHIOPHENE);

THIN FILM TRANSISTORS;

EID: 79957919976 PISSN: 15661199 EISSN: None Source Type: Journal
DOI: 10.1016/j.orgel.2011.05.011 Document Type: Article

Times cited : (15)

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