Pentacene-based thin-film transistors with a solution-process hafnium oxide insulator

IEEE Electron Device Letters

Volumn 30, Issue 10, 2009, Pages 1039-1041

  Wei, Chia Yu ^a   Adriyanto, Feri ^a   Lin, Yu Ju ^a   Li, Yu Chang ^a   Huang, Tong Jyun ^a   Chou, Dei Wei ^b   Wang, Yeong Her ^a,c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b AIR FORCE INSTITUTE OF TECHNOLOGY   (Taiwan)

^c National Applied Research Laboratory   (Taiwan)

Author keywords

Hafnium oxide; High permittivity; Organic thinfilm transistor (OTFT); Solution process; Surface energy

Indexed keywords

HAFNIUM OXIDES; HIGH PERMITTIVITY; ORGANIC THIN FILM TRANSISTORS; SOLUTION PROCESS; SURFACE ENERGIES;

HAFNIUM; HAFNIUM COMPOUNDS; INSULATION; INTERFACIAL ENERGY; OXIDES; PERMITTIVITY; SEMICONDUCTING ORGANIC COMPOUNDS; SURFACE CHEMISTRY; SURFACE ROUGHNESS; SURFACE TENSION; THIN FILM DEVICES; TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 72049126619     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2029876     Document Type: Article

References (17)

1. C. D. Dimitrakopoulos and P. R. L. .Malenfant, "Organic thin film transistors for large area electronics," Adv. Mater:, vol.14, no.2, pp. 99-117, Jan. 2002.
2. T. N. Jackson, Y. Y. Lin, D. J. Gundlach, and H. Klauk, "Organic thinfilm transistors for organic light-emitting flat-panel display backplanes," IEEE J. Sel. Topics Quantum Electron., vol.4, no.1, pp. 100-104, Jan./Feb. 1998.
3. Y. Zhao, G. Dong, L. Wang, and Y. Qiu, "Improved photostability of organic thin film transistors with tantalum oxide-poly(4-vinylphenol) double gate insulators," Appl. Phys. Lett., vol.90, no.25, p. 252110, Jun. 2007.
4. x double-layer dielectrics operating at 3 V," Electrochem. Solid-State Lett., vol.10, no.3, pp. H114-H116, Jan. 2007.
5. S. S. Cheng, C. Y. Yang, C. W. Ou, Y. C. Chuang, M. C. Wu, and C. W. Chu, "Pentacene thin-film transistor with PVP-capped high-K MgO dielectric grown by reactive evaporation," Electrochem. Solid-State Lett., vol.11, no.5, pp. H118-H120, Feb. 2008.
6. P. T. Liu, Y. M. Chou, and P. Y. Yang, "Dielectric hafnium oxide improved by supercritical carbon dioxide fluid treatment for pentacene thin-film transistors," Electrochem. Solid-State Lett., vol.11, no.7, pp. H165-H168, Apr. 2008.
7. G. D. Wilk, R. M. Wallace, and J. M. Anthony, "High-K gate dielectrics: Current status and materials properties considerations," J. Appl. Phys., vol.89, no.10, pp. 5243-5275, May 2001.
8. F. C. Chen, C. W. Chu, J. He, Y. Yang, and J. L. Lin, "Organic thinfilm transistors with nanocomposite dielectric gate insulator," Appl. Phys. Lett., vol.85, no.15, pp. 3295-3297, Oct. 2004.
9. 2/Si interfaces on nitrided and unnitrided Si(100)," J. Appl. Phys., vol.91, no.7, pp. 4353-4363, Apr. 2002.
10. T. L. Barr, "ESCA studies of naturally passivated metal foils," J. Vac. Sci. Technol., vol.14, no.1, pp. 660-665, Jan./Feb. 1977.
11. D. R. Gamota, P. Brazis, K. Kalyanasundaram, and J. Zhang, Printed Organic and Molecular Electronics. Norwell, MA: Kluwer, 2004, ch. 4, sec. 1, pp. 364-365.
12. Y. J. Lin, Y. C. Li, C. C. Yeh, S. F. Chung, L. M. Huang, T. C. Wen, and Y. H. Wang, "Organic thin film, transistor by using polymer electrolyte to modulate the conductivity of conjugated polymer," Appl. Phys. Lett., vol.89, no.22, p. 223 518, Dec. 2006.
13. P. Kim, X. H. Zhang, B. Domercq, S. C. Jones, P. J. Hotchkiss, S. R. Marder, B. Kippelen, and J. W. Perry, "Solution-processible highpermittivity nanocomposite gate insulators for organic field-effect transistors," Appl. Phys. Lett., vol.93, no.1, p. 013302, Jul. 2008.
14. D. K. Owens and R. C. Wendt, "Estimation of the surface free energy of polymers," J. Appl. Polym. Sci, vol.13, no.8, pp. 1741-1747, Aug. 1969.
15. L. F. Drummy and D. C. Martin, "Thickness-driven orthorhombic to triclinic phase transformation in pentacene thin films," Adv. Mater., vol.17, no.7, pp. 903-907, Apr. 2005.
16. S. Y. Yang, K. Shin, and C. E. Park, "The effect of gate-dielectric surface energy on pentacene morphology and organic field-effect transistor characteristics," Adv. Funct Mater., vol.15, no.11, pp. 1806-1814, Nov. 2005.
17. W. Y. Chou, C. W. Kuo, H. L. Cheng, Y. R. Chen, F. C. Tang, F. Y. Yang, D. Y. Shu, and C. C. Liao, "Effect of surface free energy in gate dielectric in pentacene thin-film transistors," Appl. Phys. Lett., vol.89, no.11, p. 112 126, Sep. 2006.