Solution-processed ZTO TFTs with recessed gate and low operating voltage

IEEE Electron Device Letters

Volumn 31, Issue 12, 2010, Pages 1410-1412

  Lee, Chen Guan ^a   Dutta, Soumya ^a   Dodabalapur, Ananth ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Low operating voltage; metal oxide semiconductor; solution process; thin film transistors (TFTs)

Indexed keywords

GATE CONFIGURATION; GATE ELECTRODES; LOW OPERATING VOLTAGE; METAL-OXIDE SEMICONDUCTOR; ON/OFF CURRENT RATIO; OPERATING VOLTAGE; RECESSED GATE; SATURATION MOBILITY; SOLUTION PROCESS; SOLUTION-PROCESSED; SUBTHRESHOLD SLOPE; SURFACE RELIEFS; ZINC TIN OXIDE; ZIRCONIUM OXIDE;

REFRACTORY METAL COMPOUNDS; TIN; TIN OXIDES; ZIRCONIA; ZIRCONIUM;

THIN FILM TRANSISTORS;

EID: 78649443625     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2081659     Document Type: Article

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