BSIM-IMG: A compact model for ultrathin-body SOI MOSFETs with back-gate control

IEEE Transactions on Electron Devices

Volumn 59, Issue 8, 2012, Pages 2019-2026

  Khandelwal, Sourabh ^a   Chauhan, Yogesh Singh ^b   Lu, Darsen D ^b   Venugopalan, Sriramkumar ^b   Ahosan Ul Karim, Muhammed ^b   Sachid, Angada Bangalore ^b   Nguyen, Bich Yen ^c   Rozeau, Olivier ^d   Faynot, Olivier ^d   Niknejad, Ali M ^b   Hu, Chenming Calvin ^b  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Soitec   (United States)

^d CEA LETI   (France)

Author keywords

BSIM IMG; compact modeling; FDSOI MOSFETs; ultrathin body silicon on insulator (UTBSOI) MOSFETs

Indexed keywords

BACK-GATE; BSIM-IMG; CHANNEL LENGTH MODULATION; COMPACT MODEL; COMPACT MODELING; COMPUTATIONALLY EFFICIENT; DRAIN CURRENT MODELS; DRAIN-INDUCED BARRIER LOWERING; EXPERIMENTAL DATA; HIGHER ORDER DERIVATIVES; INVERSION CHARGE; MOBILITY DEGRADATION; MOSFETS; NUMERICAL ACCURACY; QUANTUM CONFINEMENT EFFECTS; SELF-HEATING EFFECT; SHORT-CHANNEL DEVICES; SILICON ON INSULATOR; SILICON-ON-INSULATOR MOSFETS; SOI-MOSFETS; ULTRA-THIN-BODY; VELOCITY SATURATION;

CIRCUIT SIMULATION; COMPUTATIONAL EFFICIENCY; DEGRADATION; DRAIN CURRENT; SILICON ON INSULATOR TECHNOLOGY; SURFACE POTENTIAL;

MOSFET DEVICES;

EID: 84864766647     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2198065     Document Type: Article

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