Scalability study of ultra-thin-body SOI-MOSFETs using full-band and quantum mechanical based device simulation

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 63-64

  Takeda, Hiroshi ^a   Takeuchi, Kiyoshi ^a   Hayashi, Yoshihiro ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTH; DEVICE SIMULATIONS; FULL BAND; QUANTUM MECHANICAL; QUANTUM MECHANICAL EFFECTS; QUASI-BALLISTIC; SCALING LIMITS; SOI THICKNESS; SOI-MOSFETS; SUBSTRATE BIAS; ULTRA-THIN-BODY;

MOSFET DEVICES; SURFACE ROUGHNESS;

QUANTUM THEORY;

EID: 77957866972     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556117     Document Type: Conference Paper

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