Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

Solid State Communications

Volumn 152, Issue 17, 2012, Pages 1630-1634

  Zhang, Feng ^a,b   Li, Xiaomin ^a   Gao, Xiangdong ^a   Wu, Liang ^a,b   Zhuge, Fuwei ^a,b   Wang, Qun ^a   Liu, Xinjun ^c   Yang, Rui ^d   He, Yong ^a,b  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

A. Thin film; A. Zinc oxide; D. Resistive switching

Indexed keywords

DEFECT CONTENTS; LOW-RESISTANCE STATE; RESET VOLTAGE; RESISTIVE SWITCHING; SWITCHING PARAMETERS; VACANCY CONTENT; ZNO; ZNO FILMS; ZNO THIN FILM;

DEFECTS; OPTICAL FILMS; OXYGEN VACANCIES; SWITCHING SYSTEMS; ZINC OXIDE;

METALLIC FILMS;

EID: 84864487436     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2012.04.073     Document Type: Article

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