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Applied Physics A: Materials Science and Processing

Volumn 103, Issue 1, 2011, Pages 21-26

Unipolar resistive switching in high-resistivity Pr0.7Ca 0.3MnO3 junctions

(5) Li, Song Lin a,b Li, Jie a Zhang, Yu a Zheng, Dong Ning a Tsukagoshi, Kazuhito b

a INSTITUTE OF PHYSICS (China)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY OXIDES; CRYSTALLINITIES; CURRENT TRANSITIONS; GROWTH CONDITIONS; OXYGEN CONTENT; OXYGEN PRESSURE; RAMAN SPECTRA; RESISTANCE VALUES; RESISTIVE SWITCHING; SUBSTRATE TEMPERATURE; SWITCHING BEHAVIORS; SWITCHING CHARACTERISTICS; SWITCHING MODES; UNIPOLAR SWITCHING; UNIVERSAL BEHAVIORS; VOLTAGE DISTRIBUTION;

CURRENT VOLTAGE CHARACTERISTICS; MANGANESE OXIDE; OXYGEN; RAMAN SPECTROSCOPY; SWITCHING SYSTEMS; X RAY DIFFRACTION;

SWITCHING;

EID: 79953025908 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-011-6313-4 Document Type: Article

Times cited : (11)

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