Epitaxial growth of anatase TiO2 thin films on LaAlO3(100) prepared using pulsed laser deposition

Thin Solid Films

Volumn 515, Issue 2 SPEC. ISS., 2006, Pages 535-539

  Sakama, H ^a,b   Osada, G ^a   Tsukamoto, M ^a   Tanokura, A ^a   Ichikawa, N ^a,b  

^a SOPHIA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Anatase; Epitaxy; LaAlO3; Pulsed laser deposition; Titania

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; LANTHANUM COMPOUNDS; PULSED LASER DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; THIN FILMS; X RAY DIFFRACTION;

ANATASE; GROWTH CONDITIONS; GROWTH THICKNESS; LAALO3; OXYGEN ATMOSPHERE;

TITANIUM OXIDES;

EID: 33748775180     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.12.291     Document Type: Article

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