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Chinese Physics B

Volumn 21, Issue 7, 2012, Pages

Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer

(7) Zhang, Wei a Xue, Jun Shuai a Zhou, Xiao Wei a Zhang, Yue a Liu, Zi Yang a Zhang, Jin Cheng a Hao, Yue a

a XIDIAN UNIVERSITY (China)

Author keywords

AlGaN GaN; Si doping; superlattice

Indexed keywords

ALGAN/GAN; BIAXIAL STRESS; DOPING CONCENTRATION; FULL WIDTH AT THE HALF MAXIMUMS; GAN BUFFER; INCLINED THREADING DISLOCATIONS; ROCKING CURVES; SI-DOPING;

FULL WIDTH AT HALF MAXIMUM; SEMICONDUCTOR DOPING; SILICON; SUPERLATTICES; SURFACE ROUGHNESS; WELLS; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 84864222434 PISSN: 16741056 EISSN: None Source Type: Journal
DOI: 10.1088/1674-1056/21/7/077103 Document Type: Article

Times cited : (7)

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