Interaction between Si doping and the polarization-induced internal electric field in the AlGaN/GaN superlattice

Applied Physics Letters

Volumn 99, Issue 16, 2011, Pages

  Zhang, Wei ^a   Zhang, Yue ^a   Xue, Junshuai ^a   Zhang, Ying ^a   Lv, Ling ^a   Zhang, Jincheng ^a   Hao, Yue ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN; DEPLETION EFFECTS; DIELECTRIC CONSTANTS; ELECTRON OVERFLOW; FIRST EXCITED STATE; INTERNAL ELECTRIC FIELDS; SI-DOPING;

ELECTRIC FIELDS; ELECTRIC PROPERTIES; EXCITED STATES; POLARIZATION; SEMICONDUCTOR DOPING; SILICON; SUPERLATTICES; WELLS;

GALLIUM NITRIDE;

EID: 80155140289     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3655469     Document Type: Article

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