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Materials Research Society Symposium - Proceedings

Volumn 798, Issue , 2003, Pages 341-346

High electron mobility in AlGaN/GaN HEMT grown on sapphire: Strain modification by means of AlN interlayers

(11) Germain, Marianne a Leys, Maarten a Boeykens, Steven a Degroote, Stefan a Wang, Wenfei a Schreurs, Dominique a Ruythooren, Wouter a Choi, Kang Hoon a Van Daele, Benny b Van Tendeloo, Gustaaf b Borghs, Gustaaf a

a IMEC (Belgium)

b UNIVERSITY OF ANTWERP (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON GAS; OPTIMIZATION; PIEZOELECTRIC DEVICES; SAPPHIRE; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

POWER MICROWAVE SYSTEMS; SHEET RESISTIVITY; STRAIN ENGINEERING; THREADING DISLOCATION (TD);

ELECTRON MOBILITY;

EID: 2942635579 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-798-y10.22 Document Type: Conference Paper

Times cited : (8)

References (8)

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