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Volumn 87, Issue 9, 2010, Pages 1781-1784
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Barrier height temperature coefficient in ideal Ti/n-GaAs Schottky contacts
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Author keywords
Barrier height; GaAs; Norde's function; Schottky diodes; Thermionic emission
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Indexed keywords
BARRIER HEIGHTS;
DC SPUTTERING;
GAAS;
IDEALITY FACTORS;
INTERFACE DEFECTS;
IV CHARACTERISTICS;
SAMPLE TEMPERATURE;
SCHOTTKY CONTACTS;
SCHOTTKY DIODES;
SERIES RESISTANCE VALUES;
TEMPERATURE COEFFICIENT;
TEMPERATURE DEPENDENCE;
TEMPERATURE DEPENDENT;
TEMPERATURE RANGE;
DIODES;
GALLIUM ALLOYS;
GALLIUM ARSENIDE;
MAGNETRONS;
SEMICONDUCTING GALLIUM;
THERMIONIC EMISSION;
SCHOTTKY BARRIER DIODES;
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EID: 77955227478
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2009.10.012 Document Type: Conference Paper |
Times cited : (22)
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References (38)
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