Double barrier nature of Au/p-GaTe Schottky contact: Linearization of Richardson plot

Solid-State Electronics

Volumn 53, Issue 9, 2009, Pages 972-978

  Gülnahar, Murat ^a   Efeoǧlu, Hasan ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

GaTe; Layered crystal; Schottky barrier inhomogenities; Schottky diodes

Indexed keywords

BARRIER HEIGHTS; DOUBLE BARRIERS; GATE; IDEALITY FACTORS; LAYERED CRYSTAL; LINEARIZATION PROCEDURES; RICHARDSON CONSTANT; RICHARDSON PLOT; SCHOTTKY BARRIER INHOMOGENITIES; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; STANDARD DEVIATION; TEMPERATURE RANGE; THEORETICAL VALUES; WEIGHTING COEFFICIENT;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; GAUSSIAN DISTRIBUTION; LINEARIZATION; THERMIONIC EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 67651111853     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.03.027     Document Type: Article

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