Effects of the barrier metal thickness and hydrogen pre-annealing on the characteristic parameters of Au/n-GaAs metal-semiconductor Schottky contacts

Thin Solid Films

Volumn 516, Issue 21, 2008, Pages 7851-7856

  Gullu O ^a   Biber, M ^a   Van Meirhaeghe, R L ^b   Turut A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

^b GHENT UNIVERSITY   (Belgium)

Author keywords

Barrier height inhomogeneity; Barrier metal thickness; Hydrogen pre annealing; Schottky barrier diode

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GOLD ALLOYS; HYDROGEN; METALS; NONMETALS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS;

BARRIER HEIGHT; BARRIER HEIGHT INHOMOGENEITY; BARRIER METAL THICKNESS; BARRIER METALS; CAPACITANCE-VOLTAGE MEASUREMENTS; CHARACTERISTIC PARAMETERS; CURRENT-VOLTAGE; HYDROGEN PRE-ANNEALING; IDEALITY FACTORS; METAL-SEMICONDUCTOR INTERFACES; PRE-ANNEALING; SCHOTTKY BARRIER DIODE; SCHOTTKY CONTACTS; SEMI-CONDUCTOR SURFACES;

SCHOTTKY BARRIER DIODES;

EID: 49349113309     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.05.015     Document Type: Article

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