Analysis of current-voltage-temperature characteristics and T0 anomaly in Cr/n-GaAs Schottky diodes fabricated by magnetron sputtering technique

Materials Science and Engineering: B

Volumn 157, Issue 1-3, 2009, Pages 48-52

  Korkut, H ^a   Yildirim, N ^a   Turut, A ^a   Dogan, H ^b  

^a ATATÜRK UNIVERSITY   (Turkey)

^b CUMHURIYET UNIVERSITY   (Turkey)

Author keywords

Barrier inhomogeneity; GaAs; Metal semiconductor metal contacts; Schottky barrier diodes; T0 anomaly

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FABRICATION; III-V SEMICONDUCTORS; MAGNETRON SPUTTERING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES; TEMPERATURE;

BARRIER INHOMOGENEITIES; CURRENT-VOLTAGE; INCREASING TEMPERATURES; MAGNETRON-SPUTTERING; METAL-SEMICONDUCTOR-METAL CONTACTS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SECOND GROUP; SPUTTERING TECHNIQUES; T0 ANOMALY;

GALLIUM ARSENIDE;

EID: 59649084866     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.12.009     Document Type: Article

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