Large-area graphene synthesis and its application to interface-engineered field effect transistors

Solid State Communications

Volumn 152, Issue 15, 2012, Pages 1350-1358

  Jo, Sae Byeok ^a   Park, Jaesung ^b   Lee, Wi Hyoung ^a   Cho, Kilwon ^a   Hong, Byung Hee ^a,b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

A. Graphene; B. Chemical vapor deposition; C. Transistor; D. Molecular doping

Indexed keywords

CONDUCTIVITY RATIO; CRITICAL REVIEW; DIRECT CURRENT; ELECTRODE MATERIAL; FUNDAMENTAL LIMITATIONS; GRAPHENE SHEETS; HIGH QUALITY; INTRINSIC PROPERTY; MOLECULAR DOPING; TRANSISTOR PERFORMANCE;

CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; MECHANICAL PROPERTIES; OPTICAL CONDUCTIVITY; OPTIMIZATION; SEMICONDUCTOR GROWTH; TRANSISTORS;

GRAPHENE;

EID: 84863727249     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2012.04.056     Document Type: Article

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