Performance improvement mechanisms of i-ZnO/(NH 4 ) 2 S x -treated AlGaN MOS diodes

Applied Surface Science

Volumn 258, Issue 22, 2012, Pages 8590-8594

  Lee, Ching Ting ^a   Chiou, Ya Lan ^a   Lee, Hsin Ying ^a   Chang, Kuo Jen ^b   Lin, Jia Ching ^b   Chuang, Hao Wei ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Band offset; Charge neutrality level model; Interface state density; Vapor cooling condensation system; X ray photoelectron spectroscopy

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM GALLIUM NITRIDE; CONDENSATION; CONDUCTION BANDS; GALLIUM ALLOYS; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; INTERFACE STATES; INTERFACES (MATERIALS); MAGNETIC SEMICONDUCTORS; METALLIC FILMS; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; PHOTOELECTRONS; PHOTONS; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR DIODES; SURFACE TREATMENT; VALENCE BANDS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

BAND OFFSETS; CHARGE NEUTRALITY LEVEL; CONDUCTION BAND OFFSET; ELECTRICAL PERFORMANCE; INTERFACE STATE DENSITY; METAL-OXIDE-SEMICONDUCTOR DIODE; PERFORMANCE IMPROVEMENTS; VAPOR COOLING;

WIDE BAND GAP SEMICONDUCTORS;

EID: 84863517781     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.05.055     Document Type: Article

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