Current spreading of III-nitride light-emitting diodes using plasma treatment

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 4, 2007, Pages 1280-1283

  Lee, Hsin Ying ^a   Pan, Ke Hao ^a   Lin, Chih Chien ^a   Chang, Yun Chorng ^a   Kao, Fu Jen ^b   Lee, Ching Ting ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL YANG MING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; NITRIDES; PLASMAS; SEMICONDUCTING GALLIUM COMPOUNDS;

III-NITRIDE LEDS; INSULATING REGIONS; PLASMA TREATED DEVICES; PLASMA TREATMENT;

LIGHT EMITTING DIODES;

EID: 34547581479     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2753853     Document Type: Article

References (8)

1. C. T. Lee, H. W. Chen, and H. Y. Lee, Appl. Phys. Lett. 82, 4304 (2003).
2. S. Haffouz, H. Tang, J. A. Bardwell, S. Rolfe, E. M. Hsu, I. Sproule, S. Moisa, M. Beaulieu, and J. B. Webb, J. Vac. Sci. Technol. B 29, 1199 (2005).
3. J. Piprek, R. Farrell, S. DenBaars, and S. Nakamura, IEEE Photonics Technol. Lett. 18, 7 (2006).
4. C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, IEEE Photonics Technol. Lett. 18, 2029 (2006).
5. J. K. Sheu, et al., IEEE Electron Device Lett. 22, 460 (2001).
6. C. Huh, J. M. Lee, D. J. Kim, and S. J. Park, J. Appl. Phys. 92, 2248 (2002).
7. Y. J. Lin and C. T. Lee, Appl. Phys. Lett. 77, 3986 (2000).
8. C. T. Lee and H. W. Kao, Appl. Phys. Lett. 76, 2364 (2000).