Deep donor state in InN: Temperature-dependent electron transport in the electron accumulation layers and its influence on Hall-effect measurements

Applied Physics Letters

Volumn 99, Issue 18, 2011, Pages

  Ma, N ^a   Wang, X Q ^a   Liu, S T ^a   Feng, L ^a   Chen, G ^a   Xu, F J ^a   Tang, N ^a   Lu, L W ^a   Shen, B ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP DONOR; ELECTRON ACCUMULATION; ELECTRON DENSITIES; ELECTRON TRANSPORT; HALL EFFECT MEASUREMENT; MONTE CARLO SIMULATION; MULTILAYER MODELS; ROOM TEMPERATURE; TEMPERATURE DEPENDENT;

ACTIVATION ENERGY; COMPUTER SIMULATION; ELECTRON MOBILITY; ELECTRON TRANSITIONS; GALVANOMAGNETIC EFFECTS; MONTE CARLO METHODS; TRANSPORT PROPERTIES;

ELECTRON TRANSPORT PROPERTIES;

EID: 80855140759     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3658626     Document Type: Article

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