SCOPUS 정보 검색 플랫폼

Volumn 11, Issue 3, 2011, Pages 954-958

Electroluminescence enhancement of (112̄2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates

(8) Bae, S Y a Lee, D S a Kong, B H b Cho, H K b Kaeding, J F c Nakamura, S c Denbaars, S P c Speck, J S c

a Gwangju Institute of Science and Technology (GIST) (South Korea)

b Sungkyunkwan University (South Korea)

c UNIVERSITY OF CALIFORNIA (United States)

Author keywords

GaN; Light emitting diodes (LEDs); Miscut; MOCVD growth; Semipolar

Indexed keywords

GAN; LIGHT-EMITTING DIODES (LEDS); MISCUT; MOCVD GROWTH; SEMIPOLAR;

DEPOSITION; DIODES; ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANOMETALLICS; SAPPHIRE; SUBSTRATES; SURFACES;

GALLIUM ALLOYS;

EID: 79951677262 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2011.01.001 Document Type: Article

Times cited : (21)

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