Spontaneous formation of {1 1̄ 0 1} InGaN quantum wells on a (1 1 2̄ 2) GaN template and their electroluminescence characteristics

Semiconductor Science and Technology

Volumn 25, Issue 1, 2010, Pages

  Masui, Hisashi ^a   Kamber, Derrick S ^a   Brinkley, Stuart E ^a   Wu, Feng ^a   Baker, Troy J ^a   Zhong, Hong ^a   Iza, Michael ^a   Speck, James S ^a   Nakamura, Shuji ^a   Denbaars, Steven P ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; DEVICE STRUCTURES; DEVICE SURFACES; DOMINANT POLARIZATION; FILLING RATE; GAN TEMPLATE; INGAN QUANTUM WELLS; LOW TEMPERATURES; OPTICAL OUTPUT POWER; PHOTOINDUCED CURRENTS; PIEZO-ELECTRIC EFFECTS; POLARIZATION SWITCHING; QUANTUM WELL STRUCTURES; SPONTANEOUS FORMATION;

ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; PHOTOVOLTAIC CELLS; PIEZOELECTRICITY; POLARIZATION; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

LIGHT;

EID: 75649135241     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/1/015003     Document Type: Article

References (39)

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