Investigation of local tunneling phenomena in green InGaN-based LEDs

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2793-2796

  Onushkin, Grigory ^a   Lee, Jinhynh ^a   Yang, Jung Ja ^a   Park, Seong Eun ^a   Kim, Min Ho ^a   Koike, Masayoshi ^a  

^a Samsung Electro Mechanics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE MEASUREMENTS; GROWTH CONDITIONS; NITRIDE SEMICONDUCTORS; OPTICAL EFFICIENCY; RADIATIVE RECOMBINATION; SPECTRAL PEAKS; TUNNELING PHENOMENA;

CONCENTRATION (PROCESS); CRYSTALS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; EXCAVATION; LIGHT; LIGHT EMISSION; NITRIDES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; TUNNELING (EXCAVATION);

LIGHT EMITTING DIODES;

EID: 49749147489     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674787     Document Type: Conference Paper

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