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Journal of Applied Physics

Volumn 109, Issue 8, 2011, Pages

Electronic structure of 1/6〈202̄3〉 partial dislocations in wurtzite GaN

(6) Kioseoglou, J a Kalesaki, E a Lymperakis, L b Neugebauer, J b Komninou, Ph a Karakostas, Th a

a ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

b MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; BASAL STACKING FAULTS; CORE STRUCTURE; DISLOCATION LOOP; EPITAXIALLY GROWN; FIRST-PRINCIPLES CALCULATION; GROWTH CONDITIONS; LUMINESCENCE CHARACTERISTICS; M-PLANE; MISFIT STRAINS; NON-POLAR; PARTIAL DISLOCATIONS; SEMIPOLAR; THREADING DISLOCATION; WURTZITE GAN;

DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; STACKING FAULTS; ZINC SULFIDE;

EDGE DISLOCATIONS;

EID: 79955742829 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3569856 Document Type: Article

Times cited : (17)

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