SCOPUS 정보 검색 플랫폼

Volumn 91, Issue 3, 2007, Pages

Effects of metal gate-induced strain on the performance of metal-oxide-semiconductor field effect transistors with titanium nitride gate electrode and hafnium oxide dielectric

(10) Kang, Chang Yong a Choi, Rino a Hussain, M M a Wang, Jinguo b Suh, Young Jun b Floresca, H C b Kim, Moon J b Kim, Jiyoung b Lee, Byoung Hun a Jammy, Raj a

a SEMATECH (United States)

b UNIVERSITY OF TEXAS AT DALLAS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE WORK FUNCTION (EWF); GATE ELECTRODES; HAFNIUM OXIDE DIELECTRIC; METAL GATE-INDUCED STRAIN;

FILM THICKNESS; GATE DIELECTRICS; GATES (TRANSISTOR); STRAIN MEASUREMENT; TITANIUM COMPOUNDS; WORK FUNCTION;

MOSFET DEVICES;

EID: 34547169907 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2766667 Document Type: Article

Times cited : (20)

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