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Volumn 43, Issue 6, 1996, Pages 940-945

Observation of single interface traps in submicron MOSFET's by charge pumping

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENTS; HOT CARRIERS; INTERFACES (MATERIALS); SPURIOUS SIGNAL NOISE; TEMPERATURE;

EID: 0030165986     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.502127     Document Type: Article
Times cited : (54)

References (15)
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  • 3
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    • M. J. Uren, D. J. Day and M. J. Kirton, 1/f and random telegraph noise in silicon metal-oxide-semiconductor field-effect transis tors. Appl. Phys. Lett., vol. 47, p. 1195, 1985
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    • Coulomb energy of traps in semiconductor space charge regions
    • M. Schulz, Coulomb energy of traps in semiconductor space charge regions. J. Appl. Phys., vol. 74, p. 2649, 1993.
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    • Schulz, M.1
  • 5
    • 4243048540 scopus 로고
    • Physical mechanisms of hot carrier-induced degradation in deep submicron MOSFET's
    • S. Cristoloveanu. Physical mechanisms of hot carrier-induced degradation in deep submicron MOSFET's, Proc. ESSDERC Conf. 1993, p. 797.
    • (1993) Proc. ESSDERC Conf. , pp. 797
    • Cristoloveanu, S.1
  • 6
    • 84907684684 scopus 로고
    • Charge pumping of single interface traps m submicron MOSFET's, Froc
    • G. Groeseneken, I. De Wolf, R. Bellens and H. E. Maes, Charge pumping of single interface traps m submicron MOSFET's, Froc. ESSDERC Conf., 1994, p. 609.
    • (1994) ESSDERC Conf. , pp. 609
    • Groeseneken, G.1    De Wolf, I.2    Bellens, R.3    Maes, H.E.4
  • 7
    • 0015566216 scopus 로고
    • Theory of dynamic charge and capacitance characteristics in MIS-systems containing discrete surface traps
    • [71 J. G. Simmons and L. S. Wei, Theory of dynamic charge and capacitance characteristics in MIS-systems containing discrete surface traps, Solid State Electron., vol. 16, p. 43, 1973.
    • (1973) Solid State Electron. , vol.16 , pp. 43
    • Simmons, J.G.1    Wei, L.S.2
  • 8
    • 0342762148 scopus 로고
    • Theory of dynamic charge current and capacitance characteristics in MIS-systems containing ditributed surface traps
    • J. G. Simmons and L. S. Wei, Theory of dynamic charge current and capacitance characteristics in MIS-systems containing ditributed surface traps,'' Solid Stale Electron., vol. 16. p 53, 1973.
    • (1973) Solid Stale Electron. , vol.16
    • Simmons, J.G.1    Wei, L.S.2
  • 9
    • 36149004075 scopus 로고
    • Electron-hole recombination in Gemanium
    • R. N. Hall, Electron-hole recombination in Gemanium, Phys. Rev., vol. 87, p. 387, 1952.
    • (1952) Phys. Rev. , vol.87 , pp. 387
    • Hall, R.N.1
  • 10
    • 33748621800 scopus 로고
    • Statistics offne recombination of holes and electrons
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    • Shockicy, W.1    Read, W.T.2
  • 13
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    • Spcctroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors
    • [13[ 0. Van den bosch, G. Groeseneken, P. Heremans and H. E. Maes. Spcctroscopic charge pumping: a new procedure for measuring interface trap distributions on MOS transistors, IEEE Trans. Electron Devices, vol. 38, p. 1820, 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 1820
    • Van Bosch, D.1    Groeseneken, G.2    Heremans, P.3    Maes, H.E.4
  • 14
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    • Characterization of individual interface traps with charge pumping
    • SlSC-conference, Dec. 1995, also accepted for
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.