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Volumn 48, Issue 9 Part 1, 2009, Pages 0914041-0914043

Dominant device instability mechanism in scaled metal-oxide-semiconductor field-effect transistors with hafnium oxide dielectric

Author keywords

[No Author keywords available]

Indexed keywords

BIAS TEMPERATURE INSTABILITY; HIGH DIELECTRIC CONSTANTS; HIGH-K DIELECTRIC; INSTABILITY MECHANISMS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; NEGATIVE BIAS TEMPERATURE INSTABILITY; PHYSICAL THICKNESS;

EID: 77952726983     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.091404     Document Type: Article
Times cited : (1)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.