SCOPUS 정보 검색 플랫폼

Volumn 486, Issue 1-2, 2005, Pages 141-144

Growth mechanism of TiN film on dielectric films and the effects on the work function

(13) Choi, K a Lysaght, P a Alshareef, H b Huffman, C b Wen, H C a Harris, R c Luan, H d Hung, P Y a Sparks, C a Cruz, M a Matthews, K a Majhi, P e Lee, B H f

a SEMATECH (United States)

b TEXAS INSTRUMENTS (United States)

c ADVANCED MICRO DEVICES (United States)

d Infineon (United States)

e PHILIPS RESEARCH LABORATORIES (Germany)

f IBM (United States)

Author keywords

Atomic layer deposition; High k gate dielectric; Metal gate electrode; MOSFET; TiN; Work function

Indexed keywords

CAPACITORS; CRYSTAL MICROSTRUCTURE; CRYSTALLOGRAPHY; DIFFUSION; FILM GROWTH; HAFNIUM COMPOUNDS; MOSFET DEVICES; REACTION KINETICS; SURFACE PROPERTIES; TITANIUM NITRIDE;

ATOMIC LAYER DEPOSITION (ALD); HIGH-K GATE DIELECTRICS; METAL GATE ELECTRODES; WORK FUNCTIONS;

DIELECTRIC FILMS;

EID: 21844465125 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2004.11.239 Document Type: Conference Paper

Times cited : (33)

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