Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering

Solid-State Electronics

Volumn 53, Issue 7, 2009, Pages 760-766

  Ferain, I ^a,b   Duffy, R ^c   Collaert, N ^a   van Dal, M J H ^c   Pawlak, B J ^c   O'Sullivan, B ^a   Witters, L ^a   Rooyackers, R ^a   Conard, T ^a   Popovici, M ^a   van Elshocht, S ^a   Kaiser, M ^d   Weemaes, R G R ^d   Swerts, J ^e   Jurczak, M ^a   Lander, R J P ^c   De Meyer, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c NXP TSMC Research Center   (Belgium)

^d PHILIPS RESEARCH LABORATORIES   (Netherlands)

^e ASM BELGIUM   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACCESS RESISTANCE; CMOS TRANSISTORS; CURRENT DRIVES; ENHANCED PERFORMANCE; FIN WIDTHS; FINFETS; FULLY DEPLETED; GATE LENGTH; GATE WORK FUNCTION; HIGH ASPECT RATIO; IMMERSION LITHOGRAPHY; MOSFETS; MULTIPLE GATES; PERFORMANCE IMPROVEMENTS; SHORT-CHANNEL EFFECT; SUBSTANTIAL REDUCTION; TIN GATES; TRIGATE; UNDOPED CHANNELS;

ACCESS CONTROL; ASPECT RATIO; BORON; BORON COMPOUNDS; DIFFUSERS (OPTICAL); FINS (HEAT EXCHANGE); LEAKAGE CURRENTS; PHOTORESISTS; REFRACTORY METAL COMPOUNDS; SILICON; THRESHOLD VOLTAGE; TITANIUM COMPOUNDS; TITANIUM NITRIDE; WORK FUNCTION;

FIELD EFFECT TRANSISTORS;

EID: 67349175308     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.03.017     Document Type: Article

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