Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics

IEEE Electron Device Letters

Volumn 32, Issue 9, 2011, Pages 1290-1292

  Tran, X A ^a   Yu, H Y ^a   Gao, B ^c   Kang, J F ^b   Sun, X W ^a   Yeo, Y C ^c   Nguyen, B Y ^d   Li, M F ^e  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b PEKING UNIVERSITY   (China)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d PARC TECHNOLOGIQUE DES FONTAINES   (France)

^e FUDAN UNIVERSITY   (China)

Author keywords

HfOx; resistive random access memory (RRAM); unipolar resistive switching

Indexed keywords

CONDUCTIVE FILAMENTS; HFOX; PERFORMANCE ENHANCEMENTS; RESISTANCE DISTRIBUTION; RESISTANCE RATIO; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SI DEVICES; SI SUBSTRATES; SWITCHING PARAMETERS;

SWITCHING;

RANDOM ACCESS STORAGE;

EID: 80052028766     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2161259     Document Type: Article

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