On the interpretation of ballistic injection velocity in deeply scaled MOSFETs

IEEE Transactions on Electron Devices

Volumn 59, Issue 4, 2012, Pages 994-1001

  Liu, Yang ^a   Luisier, Mathieu ^b   Majumdar, Amlan ^c   Antoniadis, Dimitri A ^d   Lundstrom, Mark S ^e  

^a IBM RESEARCH   (United States)

^b ETH ZURICH   (Switzerland)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d USA   (United States)

^e PURDUE UNIVERSITY   (United States)

Author keywords

CMOS scaling; injection velocity; virtual source (VS)

Indexed keywords

ACCURATE ESTIMATION; BALLISTIC LIMIT; CHANNEL LENGTH; CMOS SCALING; COMPACT MODEL; DRAIN BIAS; GATE BIAS; GATE CONTACT; INJECTION VELOCITY; MOBILE CHARGE; MOSFETS; POTENTIAL BARRIERS; QUANTUM SIMULATIONS; SHORT CHANNEL MOSFETS; SOURCE CONTACT; THIN SOI; VIRTUAL SOURCES;

MOSFET DEVICES; QUANTUM CHEMISTRY; SILICON ON INSULATOR TECHNOLOGY; VELOCITY;

BALLISTICS;

EID: 84862811838     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2183599     Document Type: Article

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