Effects of composition and thermal annealing on the mechanical properties of silicon oxycarbide films

Sensors and Actuators, A: Physical

Volumn 176, Issue , 2012, Pages 90-98

  Du, Ping ^a   Wang, Xiaoning ^a   Lin, I Kuan ^a   Zhang, Xin ^a  

^a Boston University   (United States)

Author keywords

Hardness; Microstructure; Modulus; Nanoindentation; Residual stress; Silicon carbide; Silicon dioxide; Sputtering; Thermal annealing

Indexed keywords

ANNEALING TEMPERATURES; AS-DEPOSITED FILMS; CARBON CONTENT; CURVATURE MEASUREMENT; DEPTH-SENSING NANOINDENTATION; FILM STRESS; MICROSTRUCTURAL ANALYSIS; MODULUS; RF-MAGNETRON CO-SPUTTERING; SILICON OXYCARBIDES; SIOC FILM; STONEY'S EQUATION; THERMAL-ANNEALING; YOUNG'S MODULUS;

CARBON; CHEMICAL RESISTANCE; ENERGY DISPERSIVE SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HARDNESS; MICROSTRUCTURE; NANOINDENTATION; RAPID THERMAL ANNEALING; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON CARBIDE; SILICON OXIDES; SPUTTERING;

CARBON FILMS;

EID: 84862783314     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2012.01.002     Document Type: Article

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