Experiments and theory of thermally-induced stress relaxation in amorphous dielectric films for MEMS and IC applications

Sensors and Actuators, A: Physical

Volumn 127, Issue 2, 2006, Pages 221-227

  Cao, Zhiqiang ^a   Zhang, Xin ^a,b,c  

^a BOSTON UNIVERSITY   (United States)

^b IEEE   (United States)

^c ASME Societies ^*  (United States)

Author keywords

Amorphous; Dielectric films; PECVD SiOx viscoelasticity; Stress relaxation; Thermal mechanical behavior

Indexed keywords

CONSTANT PEAK TEMPERATURE ANNEALING; MECHANICAL/MATERIAL PROPERTIES; MICROSTRUCTURAL CAUSAL MECHANISM; PLASMA-ENHANCED CHEMICAL VAPOR; SILANE-BASED SILICON OXIDE; STRESS HYSTERESIS; TEMPERATURE CYCLING; VARYING PEAK TEMPERATURE ANNEALING; WAFER CURVATURE;

AMORPHOUS MATERIALS; AMORPHOUS SILICON; ANNEALING; DENSITY (OPTICAL); HYSTERESIS; PLASMAS; REDUCTION; SILANES; TEMPERATURE MEASUREMENT; THERMOANALYSIS; VISCOELASTICITY; VISCOSITY;

DIELECTRIC FILMS;

EID: 33644898134     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2005.08.025     Document Type: Article

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