Effect of thermal annealing on the structural and mechanical properties of amorphous silicon carbide films prepared by polymer-source chemical vapor deposition

Thin Solid Films

Volumn 518, Issue 10, 2010, Pages 2738-2744

  Awad, Y ^a,b   El Khakani, M A ^c   Brassard, D ^c   Smirani, R ^c   Camire N ^b   Lessard, M ^b   Aktik, C ^a   Scarlete, M ^d   Mouine, J ^a  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

^b SiXtron Advanced Materials Inc   (Canada)

^c INRS EMT   (Canada)

^d BISHOP'S UNIVERSITY   (Canada)

Author keywords

Amorphous material; Mechanical; Semiconductor; Silicon carbide; Structural; Thermal annealing

Indexed keywords

A-SIC:H; ABSORPTION BAND; ANNEALING TEMPERATURES; BOND DENSITIES; CHEMICAL BONDINGS; CHEMICAL VAPOR DEPOSITION PROCESS; FILM COMPOSITION; FILM DENSITY; FTIR MEASUREMENTS; LINEAR CORRELATION; MECHANICAL SEMI-CONDUCTOR; NANOINDENTATION TECHNIQUES; POST ANNEALING TREATMENT; SEMICONDUCTOR; SI-H BONDS; SIC FILMS; SIC THIN FILMS; STRUCTURAL AND MECHANICAL PROPERTIES; THERMAL-ANNEALING; WAVE NUMBERS; X-RAY REFLECTIVITY MEASUREMENTS; YOUNG'S MODULUS;

AMORPHOUS FILMS; ANNEALING; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DEPOSITION; ELASTIC MODULI; ELASTICITY; FILM PREPARATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HARDNESS; MECHANICAL PROPERTIES; POLYMER FILMS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; STRUCTURAL PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS SILICON;

EID: 76249112880     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.154     Document Type: Article

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