Residual-stress relaxation in polysilicon thin films by high-temperature rapid thermal annealing

Sensors and Actuators A: Physical

Volumn 64, Issue 1, 1998, Pages 109-115

  Zhang, Xin ^a   Zhang, Tong Yi ^a   Wong, Man ^a   Zohar, Yitshak ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Polysilicon thin films; Rapid thermal annealing; Residual stress

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; HIGH TEMPERATURE EFFECTS; MICROSTRUCTURE; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; SEMICONDUCTING SILICON COMPOUNDS; STRESS RELAXATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

COMPRESSIVE STRESS; POLYSILICON THIN FILMS;

THIN FILMS;

EID: 0031647456     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)01661-0     Document Type: Article

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