Porphyrin self-assembled monolayer as a copper diffusion barrier for advanced CMOS technologies

IEEE Transactions on Electron Devices

Volumn 59, Issue 7, 2012, Pages 1963-1969

  Khaderbad, Mrunal A ^a   Pandharipande, Rohit ^b   Singh, Vibhas ^c   Madhu, Sheri ^a   Ravikanth, M ^a   Ramgopal Rao, V ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b Analog Devices India Product Development Center   (India)

^c Advanced Technology Group Applied Materials   (India)

Author keywords

Copper interconnect; diffusion barrier; low k interlayer dielectric (ILD); porphyrin; self assembled monolayer (SAM)

Indexed keywords

ADVANCED CMOS; BARRIER LAYER THICKNESS; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; COPPER DIFFUSION BARRIER; COPPER INTERCONNECTS; CU DIFFUSION BARRIER; DEGRADATION STUDY; ELEVATED TEMPERATURE; FTIR; INTER-LAYER DIELECTRICS; MOISTURE RESISTANCE; MONOLAYER FORMATION; SAM LAYER; STRESS-INDUCED; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY; ZINC PORPHYRINS;

ATOMIC FORCE MICROSCOPY; CMOS INTEGRATED CIRCUITS; CONTACT ANGLE; DEGRADATION; DIELECTRIC MATERIALS; DIFFUSION BARRIERS; MECHANICAL PROPERTIES; NANOINDENTATION; PHOTOELECTRONS; PORPHYRINS; SECONDARY ION MASS SPECTROMETRY; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTOR DEVICE MANUFACTURE; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC COMPOUNDS;

COPPER;

EID: 84862702107     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2195184     Document Type: Article

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