Evaluation of Ta and TaN-based Cu diffusion barriers deposited by Advanced Hi-Fill (AHF) sputtering onto blanket wafers and high aspect ratio structures

Microelectronic Engineering

Volumn 64, Issue 1-4, 2002, Pages 307-313

  Burgess, S R ^a   Donohue, H ^a   Buchanan, K ^a   Rimmer, N ^a   Rich, P ^a  

^a Trikon Technologies Ltd   (United Kingdom)

Author keywords

Diffusion barriers; I PVD; Ta; TaN

Indexed keywords

ASPECT RATIO; COPPER; DIFFUSION; METALLIC FILMS; PHYSICAL VAPOR DEPOSITION; SPUTTER DEPOSITION;

DIFFUSION BARRIERS;

TANTALUM COMPOUNDS;

EID: 0036776551     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00803-1     Document Type: Conference Paper

References (4)

1. Step coverage and continuity of I-PVD Ta(N) barrier layer: Limitations