Molecular-nanolayer-induced suppression of in-plane Cu transport at Cu-silica interfaces

Applied Physics Letters

Volumn 90, Issue 16, 2007, Pages

  Gandhi, D D ^a   Ganesan, P G ^a   Chandrasekar, V ^b   Gan, Z ^b   Mhaisalkar, S G ^b   Li, H ^c   Ramanath, G ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMINO PROPYL TERMINI; MOLECULAR NANOLAYERS (MNL); NANODEVICE WIRING;

COPPER; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; MOLECULAR DYNAMICS; SILICA; TRANSPORT PROPERTIES; VOLTAGE MEASUREMENT;

INTERFACES (MATERIALS);

EID: 34247324374     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2722667     Document Type: Article

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