Variable interface dipoles of metallated porphyrin self-assembled monolayers for metal-gate work function tuning in advanced CMOS technologies

IEEE Transactions on Nanotechnology

Volumn 9, Issue 3, 2010, Pages 335-337

  Khaderbad, Mrunal A ^a   Roy, Urmimala ^a   Yedukondalu, M ^a   Rajesh, M ^a   Ravikanth, M ^a   Rao, V Ramgopal ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

CMOS; Interface dipole; Self assembled monolayer (SAM); Work function

Indexed keywords

ADVANCED CMOS; CENTRAL METALS; CONTINUOUS TUNING; GATE WORK FUNCTION; GATE-LAST; INTERFACE DIPOLE; METAL-GATE; TEMPERATURE STABILITY; THERMAL GRAVIMETRIC ANALYSIS;

CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); METAL IONS; METALS; MOS CAPACITORS; ORGANIC POLYMERS; PORPHYRINS; SILICON COMPOUNDS; THERMOGRAVIMETRIC ANALYSIS; TUNING; WORK FUNCTION; ZINC;

SELF ASSEMBLED MONOLAYERS;

EID: 77952630477     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2043681     Document Type: Article

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