Metallated porphyrin self assembled monolayers as Cu diffusion barriers for the nano-scale CMOS technologies

2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Volumn , Issue , 2008, Pages 167-170

  Khaderbad, Mrunal A ^a   Nayak, Kaushik ^a   Yedukondalu, M ^a   Ravikanth, M ^a   Mukherji, S ^a   Rao, V Ramgopal ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATIONS; COPPER; DIFFUSION; DIFFUSION BARRIERS; ELECTRON ENERGY LEVELS; LIGHT ABSORPTION; MISSILE BASES; NANOTECHNOLOGY; PORPHYRINS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON; THRESHOLD VOLTAGE; ULSI CIRCUITS;

CAP STRUCTURES; CMOS TECHNOLOGIES; ELECTRICAL CHARACTERIZATIONS; MATERIAL CHARACTERIZATIONS; SCALE INTEGRATIONS; TEMPERATURE STUDIES;

SELF ASSEMBLED MONOLAYERS;

EID: 55349115102     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2008.56     Document Type: Conference Paper

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